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tlme / f / k2300 document number 83200 rev. 1.7, 20-jan-05 vishay semiconductors www.vishay.com 1 e3 pb pb-free 19226 miniled ultrabright description the new miniled series have been designed in a small white smt package. the feature of the device is the very small package 2.3 mm x 1.3 mm x 1.4 mm. the minled is an obvious solution for small-scale, high-power products that are expected to work reli- ability in an arduous enviro nment. this is often the case in automotive and industrial application. features ? smd leds with exceptional brightness luminous intensity categorized compatible with automatic placement equipment ir reflow soldering available in 8 mm tape low profile package non-diffused lens: excelle nt for coupling to light pipes and backlighting low power consumption luminous intensity ratio in one packing unit i vmax /i vmin 2.0, optional 1.6 lead-free device applications automotive: backlighting in dashboards and switches telecommunication: indicator and backlighting in telephone and fax indicator and backlight for audio and video equipment indicator and backlight in office equipment flat backlight for lcds, switches and symbols parts table absolute maximum ratings t amb = 25 c, unless otherwise specified tlmk230. ,tlmf230. ,tlme230. part color, luminous intensity angle of half intensity ( ? ) technology tlmk2300 red, i v = 80 mcd (typ.) 60 alingap on gaas tlmf2300 orange, i v = 120 mcd (typ.) 60 alingap on gaas TLME2300 yellow, i v = 120 mcd (typ.) 60 alingap on gaas parameter test condition symbol value unit reverse voltage v r 5v dc forward current t amb 80 c i f 30 ma surge forward current t p 10 si fsm 0.1 a power dissipation t amb 80 c p v 80 mw junction temperature t j 125 c operating temperature range t amb - 40 to + 100 c
www.vishay.com 2 document number 83200 rev. 1.7, 20-jan-05 tlme / f / k2300 vishay semiconductors optical and electrical characteristics t amb = 25 c, unless otherwise specified red tlmk230. 1) in one packing unit i vmax /i vmin 2.0 orange tlmf230. 1) in one packing unit i vmax /i vmin 2.0 yellow tlme230. 1) in one packing unit i vmax /i vmin 2.0 storage temperature range t stg - 40 to + 100 c soldering temperature according to ipc 9501 t sd 245 c thermal resistance junction/ ambient mounted on pc board (pad size > 5 mm 2 ) r thja 580 k/w parameter test condition symbol min ty p. max unit luminous intensity 1) i f = 20 ma i v 32 80 mcd dominant wavelength i f = 20 ma d 630 nm peak wavelength i f = 20 ma p 643 nm angle of half intensity i f = 20 ma ? 60 deg forward voltage i f = 20 ma v f 1.9 2.6 v reverse voltage i r = 10 av r 5v junction capacitance v r = 0, f = 1 mhz c j 15 pf parameter test condition symbol min ty p. max unit luminous intensity 1) i f = 20 ma i v 50 120 mcd dominant wavelength i f = 20 ma d 598 605 611 nm peak wavelength i f = 20 ma p 610 nm angle of half intensity i f = 20 ma ? 60 deg forward voltage i f = 20 ma v f 2.0 2.6 v reverse voltage i r = 10 av r 5v junction capacitance v r = 0, f = 1 mhz c j 15 pf parameter test condition symbol min ty p. max unit luminous intensity 1) i f = 20 ma i v 50 120 mcd dominant wavelength i f = 20 ma d 581 588 594 nm peak wavelength i f = 20 ma p 590 nm angle of half intensity i f = 20 ma ? 60 deg forward voltage i f = 20 ma v f 2.0 2.6 v reverse voltage i r = 10 av r 5v junction capacitance v r = 0, f = 1 mhz c j 15 pf parameter test condition symbol value unit
tlme / f / k2300 document number 83200 rev. 1.7, 20-jan-05 vishay semiconductors www.vishay.com 3 typical characteris tics (tamb = 25 c unless otherwise specified) figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature figure 3. rel. luminous intensity vs. angular displacement 0 20 40 60 80 100 0 20406080100120 t amb C ambient temperature ( q c ) 17523 p Cpower dissipation (mw) v 0 5 10 15 20 25 30 35 40 0 20406080100120 t amb C ambient temperature ( q c ) 17524 i Cforward current ( ma ) f 0 . 40 . 200 . 20 . 4 0 . 6 9 5 1031 9 0 . 6 0 .9 0 . 8 0 30 10 20 40 50 60 70 80 0 . 7 1 . 0 i -r e l ati v e l uminous intensit y vre l figure 4. forward current vs. forward voltage figure 5. rel. luminous intensity vs. ambient temperature figure 6. relative luminous intensity vs. forward current 1 10 100 1 . 01 . 52 . 02 . 53 . 0 v f - forward v o l ta g e(v) 1750 9 f i - forward current ( ma ) r ed 0 . 0 0 . 2 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6 1 . 8 2 . 0 0 1020304050607080 9 0 100 t amb C ambient temperature ( q c ) 17510 i f = 20 ma i C r e l ati v e l uminous intensit y vre l r ed 0 . 01 0 . 1 1 10 1 10 100 i f - forward current ( ma ) 17511 i -r e l ati v e l uminous intensit y vre l r ed
www.vishay.com 4 document number 83200 rev. 1.7, 20-jan-05 tlme / f / k2300 vishay semiconductors figure 7. relative intensity vs. wavelength figure 8. forward voltage vs. ambient temperature figure 9. forward current vs. forward voltage 0 . 0 0 . 1 0 . 2 0 . 3 0 . 4 0 . 5 0 . 6 0 . 7 0 . 8 0 .9 1 . 0 1 . 1 1 . 2 600 610 620 630 640 650 660 670 680 6 9 0 700 o C wa v e l en g th ( nm ) 17512 i C r e l ati v e intensit y re l r ed 1 . 60 1 . 65 1 . 70 1 . 75 1 . 80 1 . 85 1 .9 0 1 .9 5 2 . 00 2 . 05 2 . 10 0 1020304050607080 9 0 100 t amb C ambient temperature ( q c ) 17513 i f = 20 ma v C forward vo l ta g e ( v ) f r ed 1 10 100 1 . 01 . 52 . 02 . 53 . 0 v f - forward v o l ta g e(v) 17503 f i - forward current ( ma ) o ran g e figure 10.rel.luminousintens ityvs.amienttemerature figure 11.relativeluminous intensityvs.forwardcurrent figure 12.relativeintensityvs.avelengt 0 . 0 0 . 2 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6 0 1020304050607080 9 0 100 t amb C ambient temperature ( q c ) 17504 i C r e l ati v e l uminous intensit y vre l i f = 20 ma o ran g e 0 . 01 0 . 1 1 10 1 10 100 i f - forward current ( ma ) 17505 i -r e l ati v e l uminous intensit y vre l o ran g e 0 . 0 0 . 1 0 . 2 0 . 3 0 . 4 0 . 5 0 . 6 0 . 7 0 . 8 0 .9 1 . 0 1 . 1 1 . 2 560 570 580 5 9 0 600 610 620 630 640 650 660 o C wa v e l en g th ( nm ) 17506 o ran g e i C r e l ati v e intensit y re l
tlme / f / k2300 document number 83200 rev. 1.7, 20-jan-05 vishay semiconductors www.vishay.com 5 figure 13. forward voltage vs. ambient temperature figure 14. forward current vs. forward voltage figure 15. rel. luminous intensity vs. ambient temperature 1 . 60 1 . 65 1 . 70 1 . 75 1 . 80 1 . 85 1 .9 0 1 .9 5 2 . 00 2 . 05 2 . 10 0 1020304050607080 9 0 100 t amb C ambient temperature ( q c ) 17507 i f = 20 ma o ran g e v C forward vo l ta g e ( v ) f 1 10 100 1 . 01 . 52 . 02 . 53 . 0 v f - forward v o l ta g e(v) 9 5 10878 y f i - forward current ( ma ) y e ll ow 0 . 0 0 . 2 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6 0 1020304050607080 9 0 100 t amb C ambient temperature ( q c ) 17508 i C r e l ati v e l uminous intensit y vre l y e ll ow i f = 20 ma figure 16. relative luminous intensity vs. forward current figure 17. relative intensity vs. wavelength figure 18. forward voltage vs. ambient temperature 0 . 01 0 . 1 1 10 1 10 100 i f - forward current ( ma ) 17501 i -r e l ati v e l uminous intensit y vre l y e ll ow 0 . 0 0 . 1 0 . 2 0 . 3 0 . 4 0 . 5 0 . 6 0 . 7 0 . 8 0 .9 1 . 0 1 . 1 1 . 2 550 560 570 580 5 9 0 600 610 620 630 640 650 C wa v e l en g th ( nm ) 9 5 10881 y y e ll ow i C r e l ati v e intensit y re l 1 . 65 1 . 70 1 . 75 1 . 80 1 . 85 1 .9 0 1 .9 5 2 . 00 2 . 05 2 . 10 2 . 15 0 1020304050607080 9 0 100 t amb C ambient temperature ( q c ) 17502 i f = 20 ma y e ll ow v C forward vo l ta g e ( v ) f
www.vishay.com 6 document number 83200 rev. 1.7, 20-jan-05 tlme / f / k2300 vishay semiconductors package dimensions in mm 168 9 2
tlme / f / k2300 document number 83200 rev. 1.7, 20-jan-05 vishay semiconductors www.vishay.com 7 reel dimensions 16 9 38
www.vishay.com 8 document number 83200 rev. 1.7, 20-jan-05 tlme / f / k2300 vishay semiconductors tape dimensions leader and trailer gs08 = 3000 pcs 16 9 3 9 tr ai l er l eader no de v i c es no de v i c es min . 200 min . 400 s tart e nd de v i c es 9 6 11818
tlme / f / k2300 document number 83200 rev. 1.7, 20-jan-05 vishay semiconductors www.vishay.com 9 cover tape peel strength according to din en 60286-3 0.1 to 1.3 n 300 10 mm/min 165 - 180 peel angle label standard bar code labels for finished goods the standard bar code labels are product labels and used for identification of goods. the finished goods are packed in final packing area. the standard pack- ing units are labeled with standard bar code labels before transported as finished goods to warehouses. the labels are on each packing unit and contain vishay semiconductor gmbh specific data. item - des c ription item - number s e l e c tion - code lo t - / s eria l- number data - code p l ant - code quantit y a cc epted b y : pa c ked b y : mixed code indi c ator o ri g in in o C batch sel c o d ptc qt y acc pck mix e d c o d e xxxxxxx + 18 8 3 10 3 ( y ww) 2 8 C C C compan y l o g o p l ain writin g abbre v iation l en g th item - number s equen c e - number p l ant - code quantit y tota l l en g th n8 2 3 8 21 l on g bar code top t y pe l en g th n x n C s e l e c tionCcode bat c h - number data - code fi l ter tota l l en g th x3 3 10 1 17 s hort bar code bottom t y pe l en g th n x C C 16 9 42 vishay semiconductor gmbh standard bar code product label (finished goods)
www.vishay.com 10 document number 83200 rev. 1.7, 20-jan-05 tlme / f / k2300 vishay semiconductors dry packing the reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transpor- tation and storage. final packing the sealed reel is packed into a cardboard box. a secondary cardboard box is used for shipping pur- poses. recommended method of storage dry box storage is recommended as soon as the alu- minium bag has been opened to prevent moisture absorption. the following conditions should be observed, if dry boxes are not available: storage temperature 10 c to 30 c storage humidity 60 % rh max. after more than 1 year under these conditions mois- ture content will be too hi gh for reflow soldering. in case of moisture abs orption, the devices will recover to the former condition by drying under the following condition: 192 hours at 40 c + 5 c/ -0 c and < 5 % rh (dry air/ nitrogen) or 96 hours at 60 c +5 c and < 5 % rh for all device containers or 24 hours at 100 c +5 c not suitable for reel or tubes. an eia jedec standard jesd22-a112 level 2 label is included on all dry bags. example of jesd22-a112 level 2 label esd precaution proper storage and handling procedures should be followed to prevent esd damage to the devices espe- cially when they are removed from the antistatic shielding bag. electro-static sensitive devices warn- ing labels are on the packaging. vishay semiconductors standard bar-code labels the vishay semiconductors standard bar-code labels are printed at final packing areas. the labels are on each packing unit and contain vishay semiconduc- tors specific data. a l uminium ba g l abe l r ee l 15 9 73 17028
tlme / f / k2300 document number 83200 rev. 1.7, 20-jan-05 vishay semiconductors www.vishay.com 11 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423

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